CHAPTER 1 INTRODUCTION
Section 1.1 Defining Characteristics of Technologies
Section 1.2 Premise of the STEEP program and the XChips
Section 1.3 Tunneling Device Introduction
CHAPTER 2 TEST STRUCTURES AND METHODS EXPLORED
Section 2.1 Individual Transistors
Section 2.2 Ring Oscillator
Section 2.3 Rapid Characterization of Threshold Variation
Section 2.4 SRAM Bitcell
Section 2.5 SRAM March Tests
CHAPTER 3 NOVEL MODIFICATIONS AND IMPROVEMENTS
Section 3.1 Rapid Threshold Characterization Improvement
Section 3.2 Usage of Rapid Characterization for On Current
CHAPTER 4 IMPLEMENTATION
Section 4.1 Pad Restrictions
Section 4.2 SRAM Test Pattern Generator
Section 4.3 90nm bulk
Section 4.4 45nm SOI
CHAPTER 5 LESSONS LEARNED
Section 5.1 Antenna Diodes
Section 5.2 Frequency response of Celadon probe card
Section 5.3 Layout Considerations of the Rapid DUT Cell
CHAPTER 6 RESULTS
Section 6.1 Simulations
Section 6.1.1 Ring Oscillator
Section 6.1.2 SRAM
Section 6.1.3 Threshold Voltage Variation Test Structure
Section 6.1.4 On current Variation Test Structure
Section 6.1.5 SRAM Bit-cell
Section 6.2 Measured
Section 6.2.1 Antenna Affect Diodes
Section 6.2.2 Individual Transistors
Section 6.2.3 Ring Oscillator
Section 6.2.4 SRAM Bit-cell
Section 6.2.5 SRAM Yield
Section 6.2.6 Rapid Threshold Variation (NMOS)
Section 6.2.7 Rapid Ion Variation (NMOS)
CHAPTER 7 CONCLUSIONS AND FUTURE WORK
Section 7.1 PMOS Rapid Characterization Test Structures
Section 7.2 Skill Code
Section 7.3 March Test Pattern Conversion
Section 7.4 Alternative Test Structures
